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PD-96959A
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67164 100K Rads (Si) IRHNA63164 300K Rads (Si) RDS(on) 0.018 0.018 ID 56A* 56A*
IRHNA67164 150V, N-CHANNEL
TECHNOLOGY
SMD-2
International Rectifier's R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ T C = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 56* 49 224 250 2.0 20 283 56 25 7.5 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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02/16/06
IRHNA67164
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
150 -- -- 2.0 50 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.17 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.8 -- -- 0.018 4.0 -- 10 25 100 -100 230 70 90 35 170 85 35 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 49A A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 49A A VDS = 120V ,VGS=0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 56A VDS = 75V VDD = 75V, ID = 56A, VGS = 12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
7390 1144 28 0.52
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 56* 224 1.2 370 4.5
Test Conditions
A
V ns C Tj = 25C, IS = 56A, VGS = 0V A Tj = 25C, IF = 56A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 0.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA67164
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Sourcee On-State Resistance (SMD-2) Diode Forward Voltage Up to 300K Rads (Si)
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA V GS = VDS, I D = 1.0mA VGS = 20V VGS = -20V VDS= 120V, VGS= 0V VGS = 12V, ID = 49A VGS = 12V, ID = 49A VGS = 0V, ID = 56A
Min
150 2.0 -- -- -- -- -- --
Max
-- 4.0 100 -100 10 0.019 0.018 1.2
Part numbers IRHNA67164 and IRHNA63164
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
LET = 39 MeV/(mg/cm2) Energy = 312 MeV Range = 39 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -10 150 -15 150 -20 150
Ion Xe
LET = 59 MeV/(mg/cm2) Energy = 825 MeV Range = 66 m VGS Bias VDS Bias (Volts) (Volts) 0 150 -5 150 -9 150 -10 140 -11 50 -15 40
180 150 120 VDS Kr 90 60 30 0 0 -5 -10 VGS -15 -20 Xe Au
Ion Au
LET = 90 MeV/(mg/cm2) Energy = 1480 MeV Range = 80 m VGS Bias VDS Bias (Volts) (Volts) 0 50 -5 50 -10 30
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNA67164
Pre-Irradiation
1000
ID, Drain-to-Source Current (A)
VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
ID, Drain-to-Source Current (A)
100
100
5.0V 10
10 5.0V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 56A
2.5
ID, Drain-to-Source Current (A)
T J = 150C 100 T J = 25C
2.0
1.5
10
1.0
VDS = 50V 15 60s PULSE WIDTH 1 5 5.5 6 6.5 7 7.5 8 8.5 9 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA67164
14000 12000 10000
VGS, Gate-to-Source Voltage (V)
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 56A 16 VDS = 120V VDS = 75V VDS = 30V
C, Capacitance (pF)
Ciss
8000 6000 4000 2000 0 1 10 100
12
Coss
8
Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 40 80 120 160 200 240 280
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
T J = 150C
T J = 25C
ID, Drain-to-Source Current (A)
100
100s
10
1ms
10
1 Tc = 25C Tj = 150C Single Pulse 0.1 1.0 10 100 10ms
VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 VSD , Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHNA67164
Pre-Irradiation
80
LIMITED BY PACKAGE
VDS VGS
RD
ID , Drain Current (A)
60
RG
D.U.T.
+
-V DD
VGS
40
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA67164
600
EAS , Single Pulse Avalanche Energy (mJ)
15V
500
TOP BOTTOM
VDS
L
DRIVER
400
ID 56A 35.4A 25A
RG
D.U.T.
IAS
300
+ - VDD
A
VGS 20V
tp
200
0.01
Fig 12a. Unclamped Inductive Test Circuit
100
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNA67164
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.18mH Peak IL = 56A, VGS = 12V A ISD 56A, di/dt 860/s, VDD 150V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 120 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2006
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